Our recent article entitled “Pulsed laser ablation and deposition of ZnS:Cr” is published in Thin Solid Films and is available online.
The article is presenting a method by which various dopant concentrations can be achieved using a single target by pulsed laser deposition. Varying doping/composition range is normally not achieved using a single target in pulsed laser deposition. Therefore, the focus of the article is describing various aspects of the method, such as target ablation study.
In addition, Cr doped ZnS films with high Cr content have spintronic and solar cell applications, for example as a potential intermediate band material. Growth of ZnS:Cr films with very high Cr content (up to 5 at.%) has not been reported previously. In the article, we report the growth and characterization of such Cr doped ZnS films.
Here are the highlights of the article:
- ZnS:Cr films (2-5 %) were deposited by pulsed laser deposition using a single target.
- Both the laser fluence and target pre-ablation affects the dopant concentration.
- The non-stoichiometric transfer was controlled in a reproducible manner.